A compound semiconductor device includes a contact structure having a plurality of layers provided on a compound semiconductor layer and an electrode provided on the contact structure. The contact structure includes a first contact layer made of In.sub.x Ga.sub.1-x As (0.9.ltoreq.x.ltoreq.1) on the side...http://www.google.es/patents/US6133592?utm_source=gb-gplus-sharePatente US6133592 - Compound semiconductor device and method for producing the same
Compound semiconductor device and method for producing the same
