A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface with a solution of NH4OH/H2O2 at treatment parameters sufficient to etch about 10 Å to about 120 Å from the wafer surface, followed by treating the etched...http://www.google.es/patents/US7645392?utm_source=gb-gplus-sharePatente US7645392 - Methods for preparing a bonding surface of a semiconductor wafer
Methods for preparing a bonding surface of a semiconductor wafer
