An extremely small minimum scaled Metal-Oxide-Semiconductor, MOS, transistor is manufactured by forming a trench in a semiconductor substrate, forming a gate in the trench, and then forming source and drain regions. The source and drain regions may be diffused into the semiconductor substrate and annealed...http://www.google.es/patents/US5300447?utm_source=gb-gplus-sharePatente US5300447 - Method of manufacturing a minimum scaled transistor
Method of manufacturing a minimum scaled transistor
