A self-aligned metal process and resulting structure is described which achieves self-aligned metal to silicon contacts and submicron contact-to-contact and metal-to-metal spacing for field effect transistor integrated circuits. All gate electrodes are composed of polycrystalline silicon while the remaining...http://www.google.es/patents/US4488162?utm_source=gb-gplus-sharePatente US4488162 - Self-aligned metal field effect transistor integrated circuits using polycrystalline silicon gate electrodes
Self-aligned metal field effect transistor integrated circuits using ...
