The invention is embodied in a novel method of forming titanium dioxide layers for metal-insulator-semiconductor device dielectrics. The titanium dioxide of a type known as rutile is formed by the deposition of titanium metal upon a layer of silicon dioxide and oxidation of titanium in an oxygen ambient...http://www.google.es/patents/US4200474?utm_source=gb-gplus-sharePatente US4200474 - Method of depositing titanium dioxide (rutile) as a gate dielectric for MIS device fabrication
Method of depositing titanium dioxide (rutile) as a gate dielectric for MIS ...
