A MOSFET comprises a silicon substrate 1 having a source/drain region 7b formed in a surface region thereof, an insulating film 3 formed of silicon oxide, and a gate electrode 4a. The side surface region of the electrode 4a is covered with an insulating film 6 formed of silicon nitride. The insulating...http://www.google.es/patents/US5254867?utm_source=gb-gplus-sharePatente US5254867 - Semiconductor devices having an improved gate
