A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g., in apparatus designed for ternary logic operations, frequency multiplication, waveform scrambling,...http://www.google.es/patents/US4902912?utm_source=gb-gplus-sharePatente US4902912 - Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics
Apparatus including resonant-tunneling device having multiple-peak current ...
