An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same. Such memory devices are formed by forming a tip protruding from a lower surface of a lower electrode element. An insulative material is applied...http://www.google.es/patents/US6150253?utm_source=gb-gplus-sharePatente US6150253 - Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same
Controllable ovonic phase-change semiconductor memory device and methods of ...
