A new structure is disclosed for semiconductor devices in which contact regions are self-aligned to conductive lines. Openings to a gate oxide layer, in partially fabricated devices on a silicon substrate, have insulating sidewalls. First polysilicon lines disposed against the insulating sidewalls extend...http://www.google.es/patents/US6858494?utm_source=gb-gplus-sharePatente US6858494 - Structure and fabricating method with self-aligned bit line contact to word line in split gate flash
Structure and fabricating method with self-aligned bit line contact to word ...
