An element including a polycide electrode is formed on a silicon substrate, and after a BPSG film is deposited as an interlevel insulating film and a contact hole is formed therein, the substrate is lamp annealed in an atmosphere containing oxygen to reflow the BPSG film. After an HF process,...http://www.google.es/patents/US5834370?utm_source=gb-gplus-sharePatente US5834370 - Manufacture of semiconductor device containing polycide electrode
Manufacture of semiconductor device containing polycide electrode
