A semiconductor apparatus is provided. The apparatus has a multiple layer heterostructure having first and second material layers having first and second bandgaps, respectively and a semiconductor layer of a third bandgap being fabricated between said material layers, the bottom of the conduction band...http://www.google.es/patents/US4525687?utm_source=gb-gplus-sharePatente US4525687 - High speed light modulator using multiple quantum well structures
High speed light modulator using multiple quantum well structures
