A process creating a crown shaped storage node electrode, for high density, DRAM designs, has been developed. The process features the formation of an hemispherical grain, (HSG), silicon layer, only on the outside walls of the amorphous silicon vertical shapes, of the crown shaped storage node electrode....http://www.google.es/patents/US5913119?utm_source=gb-gplus-sharePatente US5913119 - Method of selective growth of a hemispherical grain silicon layer on the outer sides of a crown shaped DRAM capacitor structure
Method of selective growth of a hemispherical grain silicon layer on the ...
