A two terminal, silicon based negative differential resistance (NDR) element is disclosed, to effectuate a type of NDR diode for selected applications. The two terminal device is based on a three terminal NDR-capable FET which has a modified channel doping profile, and in which the gate is tied to the...http://www.google.es/patents/US20040246764?utm_source=gb-gplus-sharePatente US20040246764 - Method of making memory cell utilizing negative differential resistance devices
Method of making memory cell utilizing negative differential resistance devices
Número de solicitud: 10/884,574 Número de publicación: US 2004/0246764 A1 Fecha de presentación: 2 Jul 2004 Patente emitida: US6990016 ( Fecha de emisión 24 Ene 2006)
