A hetero-junction FET has an intermediate layer including n-type-impurity doped layer between an electron supply layer and an n-type cap layer. The intermediate layer cancels the polarized negative charge generated between the electron supply layer and the n-type cap layer by ionized positive charge,...http://www.google.es/patents/US6552373?utm_source=gb-gplus-sharePatente US6552373 - Hetero-junction field effect transistor having an intermediate layer
Hetero-junction field effect transistor having an intermediate layer
