A multilayer decoupling capacitor structure is disclosed, having a first decoupling capacitor with one electrode formed in a conductively doped silicon substrate and a second electrode made of conductively doped polysliicon. A third bifurcated conductive layer disposed above the second electrode in conjunction...http://www.google.es/patents/US6015729?utm_source=gb-gplus-sharePatente US6015729 - Integrated chip multilayer decoupling capcitors
