A process for forming an insulated gate field effect transistor (IGFET) having a semiconductor gate with a central portion and end portions on either side thereof where the portions are of two different conductivity types. Typically, a central portion of the gate, such as a doped polysilicon portion...http://www.google.es/patents/US4714519?utm_source=gb-gplus-sharePatente US4714519 - Method for fabricating MOS transistors having gates with different work functions
Method for fabricating MOS transistors having gates with different work ...
