A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds. ...http://www.google.es/patents/US20060252244?utm_source=gb-gplus-sharePatente US20060252244 - Systems and methods for forming metal oxide layers
Systems and methods for forming metal oxide layers
Número de solicitud: 11/485,105 Número de publicación: US 2006/0252244 A1 Fecha de presentación: 12 Jul 2006 Patente emitida: US7332442 ( Fecha de emisión 19 Feb 2008)
