A method is disclosed to form an upward-pointing p-i-n diode formed of deposited silicon, germanium, or silicon-germanium. The diode has a bottom heavily doped p-type region, a middle intrinsic or lightly doped region, and a top heavily doped n-type region. The top heavily doped p-type region is doped...http://www.google.es/patents/US7767499?utm_source=gb-gplus-sharePatente US7767499 - Method to form upward pointing p-i-n diodes having large and uniform current
Method to form upward pointing p-i-n diodes having large and uniform current
