A phase change memory device includes a memory cell, first word line conductor and a second word line conductor, and first and second access devices responsive to the first and second word line conductors respectively. Control circuits are arranged to access the memory cell for read operations using...http://www.google.es/patents/US7729161?utm_source=gb-gplus-sharePatente US7729161 - Phase change memory with dual word lines and source lines and method of operating same
Phase change memory with dual word lines and source lines and method of ...
