It has a structure in which an active layer (5) that emits light by electric current injection is sandwiched between an n-type cladding layer (4) and a p-type cladding layer (6) made of materials having a larger band gap than the active layer (5), wherein the active layer (5) is made, for example, of...http://www.google.es/patents/US7132691?utm_source=gb-gplus-sharePatente US7132691 - Semiconductor light-emitting device and method for manufacturing the same
Semiconductor light-emitting device and method for manufacturing the same
