A high surface area capacitor comprising a double metal layer of an electrode metal and a barrier material deposited on hemispherical grain (HSG) silicon and a high dielectric constant (HDC) material deposited over the double metal layer. An upper cell plate electrode is deposited over the HDC material....http://www.google.es/patents/US6673689?utm_source=gb-gplus-sharePatente US6673689 - Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same
Double layer electrode and barrier system on hemispherical grain silicon for ...
