A semiconductor memory device includes a semiconductor substrate. An inter-layer dielectric is disposed on the semiconductor substrate. A bit line is disposed on the inter-layer dielectric. A bit line spacer is fabricated of a nitride layer containing boron and/or carbon and covers sidewalls of the bit...http://www.google.es/patents/US7763542?utm_source=gb-gplus-sharePatente US7763542 - Semiconductor memory device and method of fabricating the same
Semiconductor memory device and method of fabricating the same
