A non-volatile memory cell structure includes a floating gate, a reverse breakdown hot carrier injection element and a sense transistor. The reverse breakdown hot carrier injection element is at least partially formed in a first region of a semiconductor substrate under at least a portion of the floating...http://www.google.es/patents/US6232631?utm_source=gb-gplus-sharePatente US6232631 - Floating gate memory cell structure with programming mechanism outside the read path
Floating gate memory cell structure with programming mechanism outside the ...
