In a nonvolatile memory, the select gates (144S) are formed from one conductive layer (e.g. polysilicon or polyside), and the wordlines (144) interconnecting the select gates are made from a different conductive layer (e.g. metal). The wordlines overlie an dielectric (302, 304, 310) formed over control...http://www.google.es/patents/US7312497?utm_source=gb-gplus-sharePatente US7312497 - Fabrication of conductive lines interconnecting first conductive gates in nonvolatile memories having second conductive gates provided by conductive gate lines, wherein the adjacent conductive gate lines for the adjacent columns are spaced from each other, and non-volatile memory structures
Fabrication of conductive lines interconnecting first conductive gates in ...
