The present invention provides a method for depositing a pattern of deposd material on or within a substrate, comprising the steps of: interposing a glass mask between a source and a substrate, the mask having channels therethrough which are arranged in a pattern and which have an average diameter of...http://www.google.es/patents/US5332681?utm_source=gb-gplus-sharePatente US5332681 - Method of making a semiconductor device by forming a nanochannel mask
Method of making a semiconductor device by forming a nanochannel mask
