A semiconductor device and a fabrication method thereof provides a plug structure composed of a diffusion barrier layer formed at the bottom and on the sides of a contact hole and an oxidation barrier layer formed on the diffusion barrier layer that fills up the inside of the contact hole. This invention...http://www.google.es/patents/US7205192?utm_source=gb-gplus-sharePatente US7205192 - Semiconductor memory device capable of preventing oxidation of plug and method for fabricating the same
Semiconductor memory device capable of preventing oxidation of plug and ...
