A multi-layer PrxCa1-xMnO3 (PCMO) thin film capacitor and associated deposition method are provided for forming a bipolar switching thin film. The method comprises: forming a bottom electrode; depositing a nanocrystalline PCMO layer; depositing a polycrystalline PCMO layer; forming a multi-layer PCMO...http://www.google.es/patents/US20050275064?utm_source=gb-gplus-sharePatente US20050275064 - System and method for forming a bipolar switching PCMO film
System and method for forming a bipolar switching PCMO film
Número de solicitud: 10/855,942 Número de publicación: US 2005/0275064 A1 Fecha de presentación: 27 May 2004 Patente emitida: US7235407 ( Fecha de emisión 26 Jun 2007)
