A method of fabricating memory cells of a mask ROM device. A plurality of source/drain regions extending along a first direction is formed by implanting impurities into a semiconductor substrate, constituting bit lines of the memory cells. A code oxide layer is formed on a designated area of the semiconductor...http://www.google.es/patents/US5504030?utm_source=gb-gplus-sharePatente US5504030 - Process for fabricating high-density mask ROM devices
Process for fabricating high-density mask ROM devices
