A method of forming a via in a interlevel dielectric of a semiconductor device wherein the via has a fluted sidewall. A semiconductor substrate is provided having a first conductive layer formed thereon. A dielectric layer is then formed on the first conductive layer. A photoresist layer is deposited...http://www.google.es/patents/US5841196?utm_source=gb-gplus-sharePatente US5841196 - Fluted via formation for superior metal step coverage
Fluted via formation for superior metal step coverage
