A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite...http://www.google.es/patents/US20050118804?utm_source=gb-gplus-sharePatente US20050118804 - Formation of boride barrier layers using chemisorption techniques
Formation of boride barrier layers using chemisorption techniques
Número de solicitud: 10/993,925 Número de publicación: US 2005/0118804 A1 Fecha de presentación: 19 Nov 2004 Patente emitida: US7208413 ( Fecha de emisión 24 Abr 2007)
