An epitaxially grown channel layer is provided on a well structure after ion implantation steps and heat treatment steps are performed to establish a required dopant profile in the well structure. The channel layer may be undoped or slightly doped, as required, so that the finally obtained dopant concentration...http://www.google.es/patents/US7297994?utm_source=gb-gplus-sharePatente US7297994 - Semiconductor device having a retrograde dopant profile in a channel region
Semiconductor device having a retrograde dopant profile in a channel region
