A three-dimensional memory element comprises a multilayer tunnel switch portion formed by alternately stacking conductive films and insulating films, both the ends of the switch portion consisting of insulating films, a write electrode formed on the insulating film as one end of the multilayer tunnel...http://www.google.es/patents/US4972370?utm_source=gb-gplus-sharePatente US4972370 - Three-dimensional memory element and memory device
Three-dimensional memory element and memory device
