A method of making a film with a high dielectric constant uses a spin-on sol-gel process to deposit the film on a substrate, the film having a composition (SiO2)x(TiO2)1−x, where 0.50<x<0.75. The resulting film is annealed in an oxygen-containing atmosphere at a temperature lying in the range of 500°...http://www.google.es/patents/US7101754?utm_source=gb-gplus-sharePatente US7101754 - Titanium silicate films with high dielectric constant
Titanium silicate films with high dielectric constant
