A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps...http://www.google.es/patents/US20040110390?utm_source=gb-gplus-sharePatente US20040110390 - Semiconductor memory device and method of fabricating the same
Semiconductor memory device and method of fabricating the same
Número de solicitud: 10/714,909 Número de publicación: US 2004/0110390 A1 Fecha de presentación: 18 Nov 2003 Patente emitida: US7037780 ( Fecha de emisión 2 May 2006)
