A semiconductor structure comprises first gate conductors which wrap around N-wells of buried-channel P-type metal oxide semiconductor field effect transistors and second gate conductors which do not wrap around P-wells of surface-channel N-type metal oxide semiconductor field effect transistors and...http://www.google.es/patents/US6323532?utm_source=gb-gplus-sharePatente US6323532 - Deep divot mask for enhanced buried-channel PFET performance and reliability
Deep divot mask for enhanced buried-channel PFET performance and reliability
