Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. Metal boride is formed above a gate dielectric to create PMOS gate structures and metal nitride is formed over a gate dielectric to provide NMOS gate structures. The metal portions...http://www.google.es/patents/US6936508?utm_source=gb-gplus-sharePatente US6936508 - Metal gate MOS transistors and methods for making the same
Metal gate MOS transistors and methods for making the same
