An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then...http://www.google.es/patents/US5913112?utm_source=gb-gplus-sharePatente US5913112 - Method of manufacturing an insulated gate field effect semiconductor device having an offset region and/or lightly doped region
Method of manufacturing an insulated gate field effect semiconductor device ...
