According to this present invention, a semiconductor device includes source and drain diffusion layers, and a gate electrode formed on a substrate between the source diffusion layer and the drain diffusion layer. In addition, antioxidant films are respectively formed on the source diffusion layer and...http://www.google.es/patents/US5266823?utm_source=gb-gplus-sharePatente US5266823 - Semiconductor device having film for controlling diffusion of impurity
Semiconductor device having film for controlling diffusion of impurity
