A dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI4 precursor and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing titanium and oxygen onto a...http://www.google.es/patents/US20050029604?utm_source=gb-gplus-sharePatente US20050029604 - Atomic layer deposited Zr-Sn-Ti-O films using TiI4
Atomic layer deposited Zr-Sn-Ti-O films using TiI4
Número de solicitud: 10/931,341 Número de publicación: US 2005/0029604 A1 Fecha de presentación: 31 Ago 2004 Patente emitida: US7402876 ( Fecha de emisión 22 Jul 2008)
