Gate and storage dielectric systems and methods of their fabrication are presented. A passivated overlayer deposited between a layer of dielectric material and a gate or first storage plate maintains a high K (dielectric constant) value of the dielectric material. The high K dielectric material forms...http://www.google.es/patents/US20030160277?utm_source=gb-gplus-sharePatente US20030160277 - Scalable gate and storage dielectric
Número de solicitud: 10/377,904 Número de publicación: US 2003/0160277 A1 Fecha de presentación: 27 Feb 2003 Patente emitida: US6998667 ( Fecha de emisión 14 Feb 2006)
