A conductive memory stack is provided. The memory stack includes a bottom electrode, a top electrode and a multi-resistive state element. The multi-resistive state element is sandwiched between the electrodes such that the top face of the bottom electrode is in contact with the multi-resistive state...http://www.google.es/patents/US20040228172?utm_source=gb-gplus-sharePatente US20040228172 - CONDUCTIVE MEMORY STACK WITH SIDEWALL
Número de solicitud: 10/605,977 Número de publicación: US 2004/0228172 A1 Fecha de presentación: 11 Nov 2003 Patente emitida: US7186569 ( Fecha de emisión 6 Mar 2007)
