A dynamic random access memory device includes a bit line, a memory cell coupled to the bit line, and a word line coupled to the memory cell. A read activation time between receiving a read command for a read operation in order to read data: from the memory cell and activating the word-line-may be different...http://www.google.es/patents/US6484246?utm_source=gb-gplus-sharePatente US6484246 - High-speed random access semiconductor memory device
High-speed random access semiconductor memory device
