A semiconductor structure includes a semiconductor substrate; a planar transistor on a first portion of the semiconductor substrate, wherein the first portion of the semiconductor substrate has a first top surface; and a multiple-gate transistor on a second portion of the semiconductor substrate. The...http://www.google.es/patents/US8106459?utm_source=gb-gplus-sharePatente US8106459 - FinFETs having dielectric punch-through stoppers
