A process for making semiconductor structures uses a decoupled plasma source to produce a highly selective plasma etchant to form a structure with a thin adhesive layer and overlaying conductive layer. The preferred plasma is formed from chlorine and oxygen feed gases. The highly conductive semiconductor...http://www.google.es/patents/US7217652?utm_source=gb-gplus-sharePatente US7217652 - Method of forming highly conductive semiconductor structures via plasma etch
Method of forming highly conductive semiconductor structures via plasma etch
