In a semiconductor storage device, an access transistor, which has a gate electrode and a pair of impurity diffusion layers, is formed at a device activation region defined by a device isolation structure of a semiconductor substrate. A first insulating film, which has a first contact hole for exposing...http://www.google.es/patents/US20020070401?utm_source=gb-gplus-sharePatente US20020070401 - Semiconductor storage device and method of fabricating thereof
Semiconductor storage device and method of fabricating thereof
