The gettering effect in the bulk of semiconductor bodies is increased by heating the bodies prior to device processing to a temperature of from 750.degree.-900.degree. C. for from 1-8 hours in order to generate oxygen precipitates in the form of clusters....http://www.google.es/patents/US4220483?utm_source=gb-gplus-sharePatente US4220483 - Method of increasing the gettering effect in the bulk of semiconductor bodies utilizing a preliminary thermal annealing step
Method of increasing the gettering effect in the bulk of semiconductor ...
