This disclosure relates to a method of making a V-MOS field effect transistor which does not require the extra steps of epitaxial growth in order to form the source area of the transistor. The formation of the source area is achieved by masking the silicon substrate, opening an aperture in the mask and...http://www.google.es/patents/US4116720?utm_source=gb-gplus-sharePatente US4116720 - Method of making a V-MOS field effect transistor for a dynamic memory cell having improved capacitance
Method of making a V-MOS field effect transistor for a dynamic memory cell ...
