A multi-layered gate electrode of a crystalline TFT is constructed as a clad structure formed by deposition of a first gate electrode, a second gate electrode and a third gate electrode, to thereby to enhance the thermal resistance of the gate electrode. Additionally, an n-channel TFT is formed by selective...http://www.google.es/patents/US7064020?utm_source=gb-gplus-sharePatente US7064020 - Method of manufacturing a semiconductor device having a gate electrode with a three layer structure
Method of manufacturing a semiconductor device having a gate electrode with ...
