A technique for forming a high surface area electrode or storage node for a capacitor and devices formed thereby, including depositing a first layer of conductive material on a substrate, such that a discontinuous layer is formed. A second conductive material layer is deposited over the discontinuous...http://www.google.es/patents/US6608343?utm_source=gb-gplus-sharePatente US6608343 - Rough (high surface area) electrode from Ti and TiN, capacitors and semiconductor devices including same
Rough (high surface area) electrode from Ti and TiN, capacitors and ...
