An apparatus and method for in-situ monitoring of thickness during chemical-mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring channel. A film...http://www.google.es/patents/US20020089676?utm_source=gb-gplus-sharePatente US20020089676 - Method and apparatus for in-situ monitoring of thickness during chemical -mechanical polishing
Method and apparatus for in-situ monitoring of thickness during chemical ...
Número de solicitud: 09/558,877 Número de publicación: US 2002/0089676 A1 Fecha de presentación: 26 Abr 2000 Patente emitida: US6621584 ( Fecha de emisión 16 Sep 2003)
